We’re not your dad’s GaN foundry.
Lately in GaN, the news has all been about who is buying who, and not the latest and greatest technology.
TransEON is looking to change that.
GaN for the next generation.
Our team has developed a new MOS-based process that enables fabrication of cutting-edge integrated circuits with significant benefits over existing GaN HEMT technology.
Higher Performance for RF
Up to 4x higher RF power density than competing GaN processes at frequencies from HF all the way up to W-band.
Higher Performance for Power and High-Temp
Improved breakdown voltages approaching that of SiC, with industry-leading on resistance and operation to 400+ deg C.
More Development Flexibility
Faster cycle times, regular MPWs, and no minimum order quantities. Customizable processes and design services available, including 2.5D and 3D integration.
More Application Flexibility
Made in Canada, with ITAR-free and ITAR-compatible flavours available. For ITAR-free process, license-free export is available to over 32 different countries.
MPW runs coming Q4 2026.
As part of our mission to accelerate GaN foundry technology, we’re pleased to announce our first ever MPW run in Q4. Join us at IMS2026 in Boston to learn more. We’ll be on the expo floor at Booth 13082K from June 9th to June 11th.
Unable to attend? Don’t worry — sign up for email updates or contact us directly and we’ll share additional details when information is available.
Stay up to date.
Subscribe for direct email updates as we release additional details on our foundry offerings later this summer.