We’re not your dad’s GaN foundry.
Lately in GaN, the news has all been about who is buying who, and not the latest and greatest technology.
TransEON is looking to change that.
Announcing the GaN MOSFET.
Our team has developed a new MOSFET-based process that enables fabrication of cutting-edge integrated circuits with significant benefits over existing GaN HEMT technology.
Higher Performance for RF
Up to 4x higher RF power density than competing GaN processes at frequencies from HF all the way up to W-band.
Higher Performance for Power Electronics
Improved breakdown voltages approaching that of SiC, with industry-leading on resistance.
More Development Flexibility
Faster cycle times, regular MPWs, and no minimum order quantities. Customizable processes and design services available, including 2.5D and 3D integration.
More Application Flexibility
Made in Canada, with ITAR-free and ITAR-compatible flavours available. For ITAR-free process, license-free export is available to over 32 different countries.
Learn more at IMS2024.
TransEON is changing the way we think about GaN foundry technology. Join us at IMS2024 in Washington DC as we unveil our platform for the first time ever.
We’ll be hosting a launch event at the Marriott Marquis on Tuesday June 18th. Pre-registration is required. We’ll also be on the trade show floor at Booth 2343 from June 18th to June 20th.
Unable to attend? Don’t worry — sign up for email updates or contact us directly and we’ll share additional details when information is available.
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