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In today’s world, we are surrounded by radio frequency and microwave signals – sources can range from cars to fridges. While quite different in form and shape, devices across the RF and microwave spectrum are continuously evolving and face the common challenge of exponentially greater data throughput. Whether it be 5G cellular or Ka-band satcom, this ever-expanding need for data puts serious limitations on integrated circuit design. While GaN HEMT platforms have begun to expand in some of these areas, they still lack many of the performance metrics needed for ultrahigh fidelity applications.

Enter the GaN MOSFET

Where existing GaN HEMT MMIC platforms struggle, TransEON's GaN MOSFET device technology exceeds. Our GaN device platform is capable of exceptional performance in RF and microwave applications up to the THz range, offering higher saturation power, improved power-added efficiency, higher single-stage gain, and best of all - lower cost per die. This revolutionary performance is enabled by a patent-pending high-frequency device structure and several novel process techniques, including a plasma-enhanced atomic layer deposition method for high-k gate oxides developed at the University of Alberta. This ALD process enables fabrication of an extremely high quality oxide-semiconductor interface, resulting in exceptional interface trap densities [1] and MOS mobilities [2] on GaN.

[1] Rezazadeh, Vallen G., et al. "Defect Characterization of PEALD High-k ZrO2 Films Fabricated on III–V Materials." IEEE Transactions on Semiconductor Manufacturing 29.4 (2016): 355-362.

[2] Bothe, Kyle M., et al. "Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN." IEEE Transactions on Electron Devices 60.12 (2013): 4119-4124.

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To learn more about our solutions and how they can help improve your microwave integrated circuits, please contact us.